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| SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 6MBI75UB-120 MS5F 5497 Fuji Electric Co.,Ltd. Matsumoto Factory Jun. 18 '03 Y.Kobayashi Jun. 18 '03 T.Miyasaka T.Fujihira K.Yamada MS5F 5497 1 13 H04-004-07 Revised Records Date Classification Ind. Content Applied date Issued date Drawn Checked T.Miyasaka K.Yamada T.Fujihira Approved Jun.- 18 -'03 enactment MS5F 5497 2 13 H04-004-06 6MBI75UB-120 1. Outline Drawing ( Unit : mm ) ( 2. Equivalent circuit ) shows reference dimension. 30,31,32 16,17,18 19 20 1 2 U 27,28,29 3 4 33,34,35 5 6 9 10 V 24,25,26 W 21,22,23 7 8 11 12 13,14,15 MS5F 5497 3 13 H04-004-03 3.Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic Collector Power Dissipation Junction temperature Storage temperature Isolation voltage Screw Torque between terminal and copper base *1 between thermistor and others *2 Mounting *3 -Ic pulse Pc Tj Tstg Viso AC : 1min. 1ms 1 device Continuous 1ms Tc=25 Tc=80 Tc=25 Tc=80 Conditions Maximum Ratings 1200 20 100 75 200 150 75 150 390 150 -40 +125 2500 3.5 W VAC Nm A Units V V (*1) All terminals should be connected together when isolation test will be done. (*2) Two termistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) R lead R B Conditions VGE = 0V VCE = 1200V VCE = 0V VGE=20V VCE = 20V Ic = 75mA VGE=15V Ic = 75A Tj= 25 Tj=125 Tj= 25 min. 4.5 - Characteristics typ. max. 6.5 2.05 2.30 1.75 2.00 8 0.36 0.21 0.03 0.37 0.07 1.90 2.00 1.60 1.70 3.4 5000 495 3375 1.0 200 8.5 2.40 2.10 1.20 0.60 1.00 0.30 2.20 1.90 0.35 520 3450 Units mA nA V V Tj=125 VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 75A VGE=15V nF s Turn-off time Rg = 9.1 Tj= 25 Tj=125 Tj= 25 Tj=125 VGE=0V IF = 75A IF = 75A T = 25 T =100 T = 25/50 Forward on voltage 465 3305 V Reverse recovery time Lead resistance, terminal-chip * Thermistor s m K Resistance B value (*) Biggest internal terminal resistance among arm. MS5F 5497 4 13 H04-004-03 5. Thermal resistance characteristics Items Thermal resistance(1device) Contact Thermal resistance(1device) Symbols Rth(j-c) Rth(c-f) IGBT Conditions FWD with Thermal Compound () min. - Characteristics typ. max. 0.05 0.32 0.49 - Units /W This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module 6MBI75UB-120 75A 1200V Lot.No. 7.Applicable category Place of manufacturing (code) This specification is applied to IGBT Module named 6MBI75UB-120 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 90% 0V L 0V V GE trr Irr 90% VCE Vcc Ic 90% RG VGE VCE Ic 0V 0A tr(i) tr ton toff Ic 10% 10% VCE tf 10% 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F 5497 5 13 H04-004-03 11. Reliability test results Reliability Test Items Test categories Test items 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1) (Aug.-2001 edition) Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B Environment Tests Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 2605 Soldering Heat Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High Temperature Storage temp. : 1255 Storage Test duration : 1000hr. 2 Low Temperature Storage temp. : -405 Storage Test duration : 1000hr. 3 Temperature Storage temp. : 852 Humidity Relative humidity : 855% Storage Test duration : 1000hr. 4 Unsaturated Test temp. : 1202 Pressure Cooker Atmospheric pressure : 1.7 x 105 Pa Test humidity : 855% Test duration : 96hr. 5 Temperature Cycle Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100 +0 -5 5 (0:1) Mechanical Tests Test Method 404 Condition code B 5 (0:1) Test Method 303 Condition code A 5 (0:1) Test Method 302 Condition code A 5 (0:1) Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E 5 5 5 (0:1) (0:1) (0:1) 5 (0:1) Test Method 105 5 (0:1) Dwell time Number of cycles 6 Thermal Shock Test temp. Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles +5 -0 Test Method 307 method Condition code A 5 (0:1) MS5F 5497 6 13 H04-004-03 Reliability Test Items Test categories Test items 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Test temp. Bias (for gate) Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1) (Aug.-2001 edition) Test Method 101 : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test Method 101 5 (0:1) Endurance Tests Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Test Method 102 Condition code C 5 (0:1) 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 106 5 (0:1) Failure Criteria Item Characteristic Symbol ICES IGES Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note Electrical Leakage current characteristic Visual inspection Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual inspection Peeling Plating and the others USLx1.2 Broken insulation The visual sample LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5497 7 13 H04-004-03 Reliability Test Results Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A Test items 1 Terminal Strength (Pull test) 2 Mounting Strength 5 5 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 0 0 0 0 0 0 Mechanical Tests Environment Tests 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock 1 High temperature Reverse Bias Test Method 101 5 5 5 5 0 0 0 0 Endurance Tests 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 101 Test Method 102 Condition code C Test Method 106 MS5F 5497 8 13 H04-004-03 Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 / chip 200 200 Collector current vs. Collector-Emitter voltage (typ.) Tj= 125 / chip VGE=20V Collector current : Ic [A] 150 15V 12V Collector current : Ic [A] 150 VGE=20V 15V 12V 100 10V 100 10V 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 Collector current : Ic [A] 150 Tj=25 Tj=125 8 6 100 4 Ic=150A Ic=75A Ic= 37.5A 50 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] Dynamic Gate charge (typ.) Vcc=600V Ic=75ATj= 25 10.0 Cies VGE 1.0 Cres Coes 0.1 0 10 20 30 0 0 100 200 VCE 300 400 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] MS5F 5497 9 13 H04-004-03 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj= 25 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj=125 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 50 100 150 Collector current : Ic [ A ] 10 0 50 100 150 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 25 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 15 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1 Eoff(125) Eon(125) ton toff 1000 10 Eoff(25) Eon(25) 5 Err(125) Err(25) 0 tr 100 tf 10 1 10 100 1000 0 25 50 75 100 125 150 Gate resistance : Rg [ ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 125 75 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 Reverse bias safe operating area (max.) +VGE=15V,-VGE15V, RG9.1 ,Tj125 Eon 50 Collector current : Ic [ A ] 1000 150 100 25 Eoff 50 0 1 10 100 Gate resistance : Rg [ ] Err 0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] MS5F 5497 10 13 H04-004-03 Forward current vs. Forward on voltage (typ.) chip 200 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000 Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=9.1 Forward current : IF [ A ] 150 Tj=25 Tj=125 100 100 trr (125) trr (25) Irr (125) Irr (25) 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 50 100 150 Forward current : IF [ A ] Transient thermal resistance (max.) 1.00 Thermal resistanse : Rth(j-c) [/W ] FWD IGBT Temperature characteristic (typ.) 100 Resistance : R [ k ] 0.010 0.100 1.000 10 0.10 1 0.01 0.001 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ ] MS5F 5497 11 13 H04-004-03 Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959) (No.: MT5F12959) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 100mm100um10um - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE -VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCES VCE MS5F 5497 12 13 H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 5497 13 13 H04-004-03 |
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